Février 2018 – Direct elaboration of III-V photonic devices on Si platform

TeamNanomaterials & integration

ContactDr Thierry Baron

 

Photonic Integrated Circuits have been considered for many years as an obvious way to achieve complex functionalities by integrating tens to thousands of optical functions on the same chip. The possibility to use SOI as a platform to process passive (for routing, space and wavelength (de)multiplexing,…) and active devices (for modulation, Ge photodiodes,…), added to the leveraging of existing CMOS manufacturing infrastructure, made Silicon Photonics an attractive technology to address the growing demand of high-speed optoelectronic transceivers, resulting from the explosion of the Internet traffic and datacentre grow.

 

III-V Materials, needed to build laser sources, Electro Absorption Modulators (EAM) or Semiconductor Optical Amplifiers (SOA) directly on the silicon wafer are not available as standardbuilding blocks in existing process flows. In particular, laser sources are elaborated on III-V substrates either GaAs or InP and then the III-V dies are bonded onto the Si wafer to enable further processes at the wafer scale.

 

III-V direct epitaxy on standard microelectronic silicon is an interesting alternative approach which is investigated in the laboratory in collaboration our partners. We have already demonstrate the feasibility of making a laser operating at room temperature in continuous wave with an emission at 1.5 μm. i In this work, we have develop a specific GaAs buffer to avoid the formation of defects called anti-phase boundariesii.

 

To go a step further, we plan to develop specific strategies to decrease the structural defects density called dislocations, inside the active layer, namely, Aspect Ratio Trapping, surface nanostructuration… to improve the III-V buffer quality on which the laser will be grown. The objective on the work will be to develop technological strategies to decrease the dislocations density in the buffer layer and to elaborate light sources.

 

LTM/CNRS has developed an expertise in the III-V heteroepitaxy on Si(100) using a 300 mm MOCVD cluster tool including a surface preparation module. The work is done in close collaboration with CEA-Leti and industrial partners.

 

The candidate should have a PhD in materials science and/or physics with a strong expertise in materials growth/epitaxy and nanotechnology. Standard materials characterization techniques will be appreciated.

 

The postdoctoral position is in the framework of a common project between LTM/CNRS, CEALeti and industrial partners (IRT Nanoelec). The duration will be 18 months.

 

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