Associate Researcher
Phone+33 (0)4 38 78 24 55
17, Avenue des Martyrs
38054 Grenoble Cedex 9


SALEM Bassem

Dr. Bassem Salem, obtained his MSc in condensed matter from Institut National des
Sciences Appliquées de Lyon (INSA de Lyon) in 2000.

In 2003, he received his PhD in physics from INSA de Lyon, working on optical spectroscopy of InAs/InP quantum dots.

In 2003, he spent two years in Sherbrooke University, Québec-Canada, to study the realization
and the characteristics of Terahertz antennas fabricated using ion-bombarded GaAs
photoconductive materials. He has studied also the band gap tuning of InAs/InP quantum
dashes using low-energy ion-implantation-induced intermixing. In 2005 he joined the SiNaPS
laboratory in CEA Grenoble, France, working on optical spectroscopy on silicon rich oxide
doped Er.

In 2006, he spent two years in LTM-CNRS laboratory, Grenoble-France, working
on the integration of the nanowires in transistor compounds.

He joined CNRS in 2008, working in 3D integration of vertical and horizontal nanowires in nanoelectronic devices. He
is author and co-author of 2 patent and 70+ articles in International Refereed Journals.

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