Associate Researcher
 
TeamNanomaterials
eMailfranck.bassani@cea.fr
Phone+33 (0)4 38 78 65 11
AddressLTM
CEA - LETI
17, Avenue des Martyrs
38054 Grenoble Cedex 9
France

BASSANI Franck

 

BASSANI Franck

Dr. Franck BASSANI, born in 1967, is associate researcher at CNRS.

 

He obtained his Ph.D in Physics from Joseph Fourier University Grenoble in 1993.

 

He has an extensive experience on the growth and characterization of semiconductor heterostructures, from II-VI (doping of CdTe/CdZnTe by molecular beam epitaxy and CdSe/CdZnSe for blue laser devices) to IV-IV (Si/CaF2 for emission of light in Silicon and Si/Ge) heterostructures.

 

His current research is focused on dopant profiling and characterization of heterojunctions in Si/Ge nanowires grown by CVD using electrical based atomic force microscopy techniques.

 

He has authored or co-authored more than 80 publications in peer reviewed journals and has been involved in several national and european projects related to semiconductor heterostructures for their use in optoelectronic and nanoelectronic applications.


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